DDR4 | Chipsmall

DDR4Results: 53

riymuS: 119

Produkto	qIv	Presyo ng isang piraso
K4AAG165WB-MCPB SAMSUNG 16 Gb 1G x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	3684 (magagamit)	pImol
K4AAG165WA-BCTD SAMSUNG 16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	1 (magagamit)	1+46.74600 10+35.05950 30+30.38490 wa'maH
K4A8G085WC-BIWE SAMSUNG 8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production	3018 (magagamit)	1+8.56800 10+7.71120 30+5.99760 wa'maH
K4A8G165WB-BCWE SAMSUNG 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	5283 (magagamit)	pImol
K4A8G045WB-BCRC SAMSUNG 8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production	5307 (magagamit)	pImol
K4A8G165WC-BCTD SAMSUNG 8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	20430 (magagamit)	1+35.25600 10+26.44200 30+22.91640 wa'maH
K4A4G165WF-BCTD SAMSUNG 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	13600 (magagamit)	1+4.58980 10+4.13082 30+3.21286 wa'maH
K4A8G085WC-BITD SAMSUNG 8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production	23945 (magagamit)	1+25.63080 10+19.22310 30+16.66002 wa'maH
K4A8G045WC-BCTD SAMSUNG 8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production	5043 (magagamit)	pImol
K4A8G165WC-BCWE SAMSUNG 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production	3800 (magagamit)	1+8.67000 10+7.80300 30+6.06900 wa'maH