LPDDR4 | Chipsmall

LPDDR4Results: 26

riymuS: 26

Produkto	qIv	Presyo ng isang piraso
K4F2E3S4HA-GFCL SAMSUNG 12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production	3494 (magagamit)	pImol
K4FHE3D4HA-GUCL SAMSUNG 24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production	4323 (magagamit)	pImol
K4F6E3D4HB-MFCJ SAMSUNG 16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production	3662 (magagamit)	pImol
K4F6E3S4HM-GHCL SAMSUNG 16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	4945 (magagamit)	1+14.90400 10+13.41360 30+10.43280 wa'maH
K4F6E3S4HM-GFCL SAMSUNG 16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production	3840 (magagamit)	pImol
K4F4E3S4HF-GHCJ SAMSUNG 4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	15796 (magagamit)	1+57.20000 10+42.90000 30+37.18000 wa'maH
K4F2E3S4HM-MHCJ SAMSUNG 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	4955 (magagamit)	pImol
K4F8E3S4HB-MHCJ SAMSUNG 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	3574 (magagamit)	pImol
K4FBE3D4HM-GHCL SAMSUNG 32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	3919 (magagamit)	pImol
K4FHE3D4HM-MHCJ SAMSUNG 24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production	4298 (magagamit)	pImol